BC847BPDW1T1G ON Semiconductor, BC847BPDW1T1G Datasheet - Page 7

• Manufacturer Part Number: BC847BPDW1T1G
• Description: Bipolar Small Signal 100mA 50V Dual Complementary
• Manufacturer: ON Semiconductor

Specifications of BC847BPDW1T1G

• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 2
• Collector-emitter Voltage: 45V
• Collector-base Voltage(max): 50V
• Emitter-base Voltage (max): 6/5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.0
6.0
4.0
2.0
20
10
40
-0.1 -0.2
-0.5
V
Figure 15. Capacitance
R
, REVERSE VOLTAGE (VOLTS)
-1.0
-2.0
C
ib
-5.0
TYPICAL PNP CHARACTERISTICS — BC846
C
ob
-10
-20
T
J
= 25°C
-50
http://onsemi.com
-100
7
500
200
100
50
20
Figure 16. Current−Gain − Bandwidth Product
V
CE
= -5.0 V
-1.0
I
C
, COLLECTOR CURRENT (mA)
-10
-100