BSM200GB120DN2 Infineon Technologies, BSM200GB120DN2 Datasheet - Page 8

• Manufacturer Part Number: BSM200GB120DN2
• Description: IGBT Modules 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 290 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.4 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Module Configuration: Dual
• Dc Collector Current: 290A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Pd: 1.4kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 200 GB 120 DN2
Forward characteristics of fast recovery
reverse diode
parameter: T
I
F
400
300
250
200
150
100
50
A
0
0.0
j
0.5
I
F
= f(V
1.0
F
T
)
j
=125°C
1.5
2.0
T
j
=25°C
V
V
F
3.0
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= (t
-1
-2
-3
-4
0
10
-5
p
)
single pulse
10
p
-4
/ T
10
-3
10
-2
Diode
D = 0.50
10
Oct-21-1997
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0