BSM200GB120DN2 Infineon Technologies, BSM200GB120DN2 Datasheet - Page 4
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BSM200GB120DN2
Manufacturer Part Number
BSM200GB120DN2
Description
IGBT Modules 1200V 200A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM200GB120DN2.pdf
(11 pages)
Specifications of BSM200GB120DN2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
290 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.4 KW
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge2
Module Configuration
Dual
Dc Collector Current
290A
Collector Emitter Voltage Vces
3V
Power Dissipation Pd
1.4kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +125°C
Rohs Compliant
Yes
Ic (max)
200.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON
Quantity:
45
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM200GB120DN2
Quantity:
50
Company:
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
726
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
20 000
BSM 200 GB 120 DN2
Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
C
tot
I
tot
C
= (T
= (T
1500
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
300
260
240
220
200
180
160
140
120
100
80
60
40
20
W
A
0
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0, T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= (V
K/W
10
10
10
10
10
10
10
10
10
10
= (t
A
-1
-2
-3
-4
-5
3
2
1
0
0
CE
10
10
0
-5
)
p
)
single pulse
10
p
10
-4
/ T
1
C
= 25°C , T
10
-3
10
2
10
j
-2
IGBT
DC
150 °C
t
10
p = 49.0µs
Oct-21-1997
D = 0.50
10
3
100 µs
1 ms
10 ms
V
t
-1
p
0.20
0.10
0.05
0.02
0.01
CE
V
s
10
0