BSM50GP120 Infineon Technologies, BSM50GP120 Datasheet - Page 8
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BSM50GP120
Manufacturer Part Number
BSM50GP120
Description
IGBT Modules 1200V 50A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GP120.pdf
(12 pages)
Specifications of BSM50GP120
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
360 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM50GP120
Manufacturer:
NICHICON
Quantity:
30 000
Company:
Part Number:
BSM50GP120
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM50GP120
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM50GP120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM50GP120
Quantity:
50
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
120
100
1
80
60
40
20
0,001
0
0
Sicherer Arbeitsbereich Wechselr. (RBSOA)
Reverse bias save operating area Inverter (RBSOA)
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
200
Zth-IGBT
Zth-FWD
0,01
400
BSM50GP120
IC,Modul
IC,Chip
V
CE
t [s]
600
8(11)
[V]
0,1
800
Z
thJC
T
vj
= 125°C, V
= f (t)
1000
C
I
= f (V
1
GE
CE
= ±15V, R
)
1200
G
=
15 Ohm
1400
10
DB-PIM-10.xls