BSM50GP120 Infineon Technologies, BSM50GP120 Datasheet - Page 2
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BSM50GP120
Manufacturer Part Number
BSM50GP120
Description
IGBT Modules 1200V 50A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GP120.pdf
(12 pages)
Specifications of BSM50GP120
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
360 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM50GP120
Manufacturer:
NICHICON
Quantity:
30 000
Company:
Part Number:
BSM50GP120
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM50GP120
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM50GP120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM50GP120
Quantity:
50
IGBT-Module
IGBT-Modules
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Technische Information / Technical Information
Elektrische Eigenschaften / Electrical properties
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
T
T
T
T
T
V
V
V
f = 1MHz, T
V
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
T
BSM50GP120
C
C
C
C
C
C
P
vj
vj
vj
vj
C
vj
GE
GE
CE
CE
GE
GE
CE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= I
= I
= I
= I
= I
= I
£ 10µs, V
£125°C,
= 150°C,
= 150°C
= 150°C
= 150°C,
= 25°C
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V,
= 0V,
= 0V, V
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
Nenn
Nenn
Nenn
Nenn
Nenn
Nenn
GE
,
,
,
,
,
,
,
GE
vj
T
T
T
GE
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
=20V, T
= 25°C, V
=125°C, V
= 25°C,
= 125°C,
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 125°C, R
= 125°C, R
£ 15V,
= 25°C,
2(11)
= 0 V
vj
=25°C
dI/dt =
V
V
V
V
V
V
V
R
L
L
CC
CE
CE
CC
CC
CC
CC
CC
CC
I
I
G
I
V
G
G
G
G
G
G
G
G
G
G
C
C
S
S
C
I
F
=
=
R
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
= 50 A
= 1600 V
50 A
50 A
2 mA
1200 V
1200 V
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
50 nH
600 V
15 Ohm
50 nH
15 Ohm
720 V
4000 A/µs
R
V
V
V
V
AA'+CC'
I
I
GE(TO)
C
t
t
CE sat
E
E
I
V
CES
GES
d,off
d,on
ISOL
I
(TO)
r
SC
t
t
R
ies
T
on
off
r
f
F
min.
min.
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
1,05
380
400
300
2,5
2,2
2,5
5,5
3,3
3,0
4,0
6,5
65
60
45
45
10
30
3
4
6
-
-
-
max.
max.
2,55
500
300
0,8
6,5
6,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DB-PIM-10.xls
mWs
mWs
mW
mW
mA
mA
kV
nF
µA
nA
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A