BSM15GP120 Infineon Technologies, BSM15GP120 Datasheet - Page 9

• Manufacturer Part Number: BSM15GP120
• Description: IGBT Modules 1200V 15A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM15GP120

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 15 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,5
1
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
BSM15GP120
1,5
1
V
V
CE
F
9(11)
2
[V]
[V]
1,5
2,5
3
2
I
F
= f (V
I
C
V
= f (V
GE
3,5
F
)
= 15 V
2,5
CE
)
4
4,5
DB-PIM-10 (2).xls
3