BSM15GP120 Infineon Technologies, BSM15GP120 Datasheet - Page 7

• Manufacturer Part Number: BSM15GP120
• Description: IGBT Modules 1200V 15A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM15GP120

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 15 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
2,5
1,5
0,5
3
2
1
0
6
5
4
3
2
1
0
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
10
5
Eon
Eoff
Erec
20
Eon
Eoff
Erec
10
BSM15GP120
30
R
I
C
G
15
[A]
40
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
= f (R
C
50
), E
G
20
), E
GE
off
V
= +-15 V ,
off
GE
= f (I
= ±15 V,
= f (R
60
C
), E
25
G
), E
rec
I
c
= I
= f (I
rec
70
nenn
R
Gon
= f (R
C
,
)
= R
V
V
30
CC
CC
G
Goff
)
=
=
80
=
600 V
47 Ohm
600 V
DB-PIM-10 (2).xls
35
90