BGA 428 H6327 Infineon Technologies, BGA 428 H6327 Datasheet - Page 9
BGA 428 H6327
Manufacturer Part Number
BGA 428 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet
1.BGA_428_H6327.pdf
(11 pages)
Specifications of BGA 428 H6327
Mounting Style
SMD/SMT
Operating Frequency
1.8 GHz
P1db
- 19 dBm
Noise Figure
1.4 dB
Operating Supply Voltage
4 V
Supply Current
8.2 mA
Maximum Power Dissipation
50 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA428H6327XT
3
Refer to the application circuit given in
Data Sheet
Power Gain |S21|
V
Off−Gain |S
V
CC
CC
−10
−15
−20
−25
−10
−11
−12
−13
−14
−15
−16
−17
−18
−19
−20
−5
20
15
10
Measured Parameters
5
0
= 2.7V, V
= 0.0V, V
0
2
2.2
1
21
Out
Out
|
2
2.4
Frequency [GHz]
=f(V
2
=2.7V
=0.0V,R
2
V
=f(f)
CTRL
CTRL
2.6
3
[V]
CTRL
)
2.8
4
1990MHz
1800MHz
=2.7k
5
3
Figure 3
3.2
6
9
Power Gain |S21|
V
Matching |S
V
CC
CC
−10
−15
−20
−25
−30
−5
23
22
21
20
19
18
17
16
15
0
= 2.7V, V
= 2.7V, V
1.7
1
S
11
11
1.8
1.5
Out
Out
|,|S
Frequency [GHz]
Frequency [GHz]
S
=2.7V
=2.7V
22
22
2
=f(f)
|=f(f)
1.9
2
Measured Parameters
2.5
Rev. 2.2, 2007-11-06
2
2.1
3
BGA428