BGA 428 H6327 Infineon Technologies, BGA 428 H6327 Datasheet - Page 8

• Manufacturer Part Number: BGA 428 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon Germanium MMICr

Specifications of BGA 428 H6327

• Mounting Style: SMD/SMT
• Operating Frequency: 1.8 GHz
• P1db: - 19 dBm
• Noise Figure: 1.4 dB
• Operating Supply Voltage: 4 V
• Supply Current: 8.2 mA
• Maximum Power Dissipation: 50 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA428H6327XT

2.2
Table 5
Parameter
Insertion power gain
Noise figure (
Input power at 1 dB gain compression
Input third order intercept point
Total device current
Insertion loss in gain-step-mode
Figure 3
Data Sheet
Application Circuit Characteristics (measured in test circuit specified in
Figure
specified
Application Circuit Characteristics
Application Circuit for 1850 MHz
Z
S
= 50
3),
RFin
T
A
= 25 °C,
V
CTRL
150pF
3k
V
Symbol
|S
NF
P
IIP
I
L
tot
GS
-1dB
21
CC
GS
In
3
|
2
= 2.7 V, Frequency = 1.85 GHz, unless otherwise
BGA428
Min.
Vcc
GND
8
Typ.
19
1.4
-19
-9
8.2
13.5
Out
Values
BGA428_Application_Circuit.vsd
47pF 180pF
3.9nH
Max.
0.9pF
Supply
RFout
Electrical Characteristics
Unit
dB
dB
dBm
dBm
mA
dB
Rev. 2.2, 2007-11-06
Note /
Test Condition
V
V
R
CC
CTRL
CRRL
= 0.0 V,
= 2.7 V,
= 3 k
BGA428