BGA 428 H6327 Infineon Technologies, BGA 428 H6327 Datasheet - Page 4
BGA 428 H6327
Manufacturer Part Number
BGA 428 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet
1.BGA_428_H6327.pdf
(11 pages)
Specifications of BGA 428 H6327
Mounting Style
SMD/SMT
Operating Frequency
1.8 GHz
P1db
- 19 dBm
Noise Figure
1.4 dB
Operating Supply Voltage
4 V
Supply Current
8.2 mA
Maximum Power Dissipation
50 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA428H6327XT
1
Feature
•
•
•
•
•
•
•
•
1) Pb-containing package may be available upon special request
Figure 1
Description
BGA428 is a high gain, low noise amplifier.
Type
BGA428
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
High gain,
Low noise figure,
Prematched
Ideal for GSM, DCS1800, PCS1900
Open collector output
Typical supply voltage: 2.4 - 3 V
SIEGET
Pb-free (RoHS compliant) package
®
Silicon Germanium Broadband MMIC Amplifier
Pin connection
-45 technology
G
MA
= 20 dB at 1.8 GHz
NF
= 1.4 dB at 1.8 GHz
Package
SOT363
1)
4
Silicon Germanium Broadband MMIC Amplifier
SOT363
Marking
PGs
6
5
4
Rev. 2.2, 2007-11-06
1
2
3
BGA428