VSMG2720-GS08 Vishay, VSMG2720-GS08 Datasheet - Page 3

• Manufacturer Part Number: VSMG2720-GS08
• Description: Infrared Emitters High Speed Emitter 5V 160mW 830nm 60Deg
• Manufacturer: Vishay

Specifications of VSMG2720-GS08

• Radiant Intensity: 14 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 160 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Operating Voltage: 5 V
• Wavelength: 830 nm
• Package / Case: PLCC-2
• Peak Wavelength: 830nm
• Forward Current If(av): 100mA
• Rise Time: 15ns
• Fall Time Tf: 15ns
• Supply Voltage Range: 1.45V
• Viewing Angle: 60°
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BASIC CHARACTERISTICS
T
Document Number: 81597
Rev. 1.2, 03-Nov-09
amb
= 25 °C, unless otherwise specified
21629
Fig. 3 - Pulse Forward Current vs. Pulse Duration
16031
21009
1000
0.001
1000
100
0.01
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
100
0.1
10
0.1
10
1
1
0.01
1
0
0.5
I
F
- Forward Pulse Current (mA)
V
0.1
t
1
F
P
- Forward Voltage (V)
- Pulse Duration (ms)
10
1.5
t
P
/T = 0.01
1
2
For technical questions, contact:
2.5
0.02
100
0.05
T
0.2
0.5
10
3
High Speed Infrared Emitting Diode,
amb
t
t
p
p
/T = 0.001
= 1 µs,
< 50 °C
830 nm, GaAlAs Double Hetero
3.5
0.1
1000
100
4
[e-mail]
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
16972_1
94 8013
Fig. 6 - Relative Radiant Power vs. Wavelength
1.25
0.75
0.25
1.0
0.9
0.8
0.7
1.0
0.5
0
740
0.6
0.4
Vishay Semiconductors
800
λ- Wavelength (nm)
0.2
0°
0
10°
VSMG2720
900
20°
www.vishay.com
30°
40°
50°
60°
70°
80°
3