VSMG2720-GS08 Vishay, VSMG2720-GS08 Datasheet - Page 2

• Manufacturer Part Number: VSMG2720-GS08
• Description: Infrared Emitters High Speed Emitter 5V 160mW 830nm 60Deg
• Manufacturer: Vishay

Specifications of VSMG2720-GS08

• Radiant Intensity: 14 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 160 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Operating Voltage: 5 V
• Wavelength: 830 nm
• Package / Case: PLCC-2
• Peak Wavelength: 830nm
• Forward Current If(av): 100mA
• Rise Time: 15ns
• Fall Time Tf: 15ns
• Supply Voltage Range: 1.45V
• Viewing Angle: 60°
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

VSMG2720
Vishay Semiconductors
Note
T
Note
T
www.vishay.com
2
amb
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Cut-off frequency
Virtual source diameter
= 25 °C, unless otherwise specified
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21343
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 250 K/W
- Ambient Temperature (°C)
e
p
F
For technical questions, contact:
J-STD-051, soldered on PCB
I
High Speed Infrared Emitting Diode,
DC
V
Acc. figure 8, J-STD-020
I
I
I
R
F
F
F
t
= 70 mA, I
830 nm, GaAlAs Double Hetero
p
I
= 0 V, f = 1 MHz, E = 0
I
= 100 mA, t
= 100 mA, t
= 100 mA, t
TEST CONDITION
TEST CONDITION
F
F
/T = 0.5, t
= 1 A, t
= 1 A, t
I
I
I
I
I
I
t
F
F
F
F
F
F
p
I
F
V
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 μs
R
= 1 mA
= 5 V
p
p
AC
p
= 100 μs
= 100 μs
p
p
p
= 100 μs
= 30 mA pp
= 20 ms
= 20 ms
= 20 ms
[e-mail]
SYMBOL
TKλ
TK
TKφ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
f
d
t
t
SYMBOL
R
e
e
c
F
F
e
p
r
f
VF
j
21344
e
p
R
T
I
T
T
I
FSM
V
P
FM
amb
thJA
I
T
stg
F
sd
R
V
j
120
100
80
60
40
20
0
0
MIN.
10
R
8
thJA
T
amb
20 30 40
= 250 K/W
- Ambient Temperature (°C)
- 40 to + 100
- 40 to + 85
VALUE
- 0.35
TYP.
- 1.8
1.45
± 60
0.25
0.67
100
200
160
100
260
250
125
135
830
2.1
14
45
40
15
15
24
5
1
50 60 70 80
Document Number: 81597
MAX.
1.6
10
24
Rev. 1.2, 03-Nov-09
90 100
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
A
V
mW/sr
mW/sr
mV/K
UNIT
nm/K
MHz
%/K
mW
mm
deg
nm
nm
μA
pF
ns
ns
V
V