VSMG2720-GS08 Vishay, VSMG2720-GS08 Datasheet - Page 2
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VSMG2720-GS08
Manufacturer Part Number
VSMG2720-GS08
Description
Infrared Emitters High Speed Emitter 5V 160mW 830nm 60Deg
Manufacturer
Vishay
Datasheet
1.VSMG2720-GS08.pdf
(6 pages)
Specifications of VSMG2720-GS08
Radiant Intensity
14 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
160 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Operating Voltage
5 V
Wavelength
830 nm
Package / Case
PLCC-2
Peak Wavelength
830nm
Forward Current If(av)
100mA
Rise Time
15ns
Fall Time Tf
15ns
Supply Voltage Range
1.45V
Viewing Angle
60°
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
VSMG2720
Vishay Semiconductors
Note
T
Note
T
www.vishay.com
2
amb
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Cut-off frequency
Virtual source diameter
= 25 °C, unless otherwise specified
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21343
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 250 K/W
- Ambient Temperature (°C)
e
p
F
For technical questions, contact:
J-STD-051, soldered on PCB
I
High Speed Infrared Emitting Diode,
DC
V
Acc. figure 8, J-STD-020
I
I
I
R
F
F
F
t
= 70 mA, I
830 nm, GaAlAs Double Hetero
p
I
= 0 V, f = 1 MHz, E = 0
I
= 100 mA, t
= 100 mA, t
= 100 mA, t
TEST CONDITION
TEST CONDITION
F
F
/T = 0.5, t
= 1 A, t
= 1 A, t
I
I
I
I
I
I
t
F
F
F
F
F
F
p
I
F
V
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 μs
R
= 1 mA
= 5 V
p
p
AC
p
= 100 μs
= 100 μs
p
p
p
= 100 μs
= 30 mA pp
= 20 ms
= 20 ms
= 20 ms
emittertechsupport@vishay.com
SYMBOL
TKλ
TK
TKφ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
f
d
t
t
SYMBOL
R
e
e
c
F
F
e
p
r
f
VF
j
21344
e
p
R
T
I
T
T
I
FSM
V
P
FM
amb
thJA
I
T
stg
F
sd
R
V
j
120
100
80
60
40
20
0
0
MIN.
10
R
8
thJA
T
amb
20 30 40
= 250 K/W
- Ambient Temperature (°C)
- 40 to + 100
- 40 to + 85
VALUE
- 0.35
TYP.
- 1.8
1.45
± 60
0.25
0.67
100
200
160
100
260
250
125
135
830
2.1
14
45
40
15
15
24
5
1
50 60 70 80
Document Number: 81597
MAX.
1.6
10
24
Rev. 1.2, 03-Nov-09
90 100
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
A
V
mW/sr
mW/sr
mV/K
UNIT
nm/K
MHz
%/K
mW
mm
deg
nm
nm
μA
pF
ns
ns
V
V