PK60X256VLQ100 Freescale Semiconductor, PK60X256VLQ100 Datasheet - Page 33

• Manufacturer Part Number: PK60X256VLQ100
• Description: IC ARM CORTEX MCU 256K 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr

Specifications of PK60X256VLQ100

• Core Processor: ARM Cortex-M4
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, IrDA, SDHC, SPI, UART/USART, USB, USB OTG
• Peripherals: DMA, I²S, LVD, POR, PWM, WDT
• Number Of I /o: 100
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 33x16b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
6.4.1.4 Reliability specifications
Freescale Semiconductor, Inc.
t
t
t
t
t
t
t
t
t
eewr16b128k
eewr16b256k
t
eewr32b128k
eewr32b256k
t
t
t
eewr16b32k
eewr16b64k
eewr32b32k
eewr32b64k
t
eewr16bers
eewr32bers
nvmretp10k
nvmretp100
nvmretd10k
n
Symbol
Symbol
nvmretp1k
nvmcycp
I
Symbol
DD_PGM
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Description
Description
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Table 19. Flash command timing specifications (continued)
Worst case programming current in program flash
Description
Table 20. Flash (FTFL) current and power specfications
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Table 21. NVM reliability specifications
Longword-write to FlexRAM for EEPROM operation
Table continues on the next page...
Program Flash
Preliminary
Data Flash
10 K
Min.
Min.
10
15
—
—
—
—
—
—
—
—
—
—
5
5
Peripheral operating requirements and behaviors
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
100
200
1
Max.
TBD
TBD
TBD
TBD
TBD
TBD
Max.
Typ.
1.5
2.5
2.7
3.7
10
—
—
—
—
—
cycles
years
years
years
years
Unit
Unit
ms
ms
ms
ms
ms
ms
ms
ms
μs
μs
Unit
mA
Notes
Notes
2
2
2
3
2
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