ATTINY13A-SS7R Atmel, ATTINY13A-SS7R Datasheet - Page 108

• Manufacturer Part Number: ATTINY13A-SS7R
• Description: IC MCU AVR 1K FLASH 8SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY13A-SS7R

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 6
• Program Memory Size: 1KB (512 x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 64 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Connectivity: -

17.6.2
Table 17-9.
108
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
Write EEPROM Memory
Load EEPROM Memory
Page (page access)
Write EEPROM Memory
Page (page access)
Read Lock Bits
Write Lock Bits
ATtiny13A
Serial Programming Instruction set
Serial Programming Instruction Set
.
Table 17-8.
The instruction set is described in
Symbol
t
t
t
t
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
0010 H000
0100 H000
1010 0000
0101 1000
1010 1100
1010 1100
0100 1100
1100 0000
1100 0001
1100 0010
1010 1100
Byte 1
Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
00xx xxxx
0101 0011
0000 000a
0000 000a
0000 0000
0000 0000
100x xxxx
000x xxxx
000x xxxx
000x xxxx
111x xxxx
Byte 2
Instruction Format
bbbb bbbb
xxbb bbbb
xxbb bbbb
xxbb bb00
0000 00bb
xxxx bbbb
bbbb xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
Table
Byte 3
17-9.
oooo oooo
oooo oooo
xxoo oooo
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
Byte4
11ii iiii
iiii iiii
iiii iiii
iiii iiii
Minimum Wait Delay
Operation
Enable Serial Programming after
RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address a:b.
Write H (high or low) data i to Program
memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program memory Page at
address a:b.
Read data o from EEPROM memory at
address b.
Write data i to EEPROM memory at
address b.
Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM page at address b.
Read lock bits. “0” = programmed, “1”
= unprogrammed. See
page 103
Write lock bits. Set bits = “0” to
program lock bits. See
page 103
4.5 ms
4.0 ms
9.0 ms
4.5 ms
for details.
for details.
Table 17-1 on
Table 17-1 on
8126E–AVR–07/10