BLF7G27L-100,118 NXP Semiconductors, BLF7G27L-100,118 Datasheet - Page 6

TRANSISTOR PWR LDMOS SOT502

BLF7G27L-100,118

Manufacturer Part Number
BLF7G27L-100,118
Description
TRANSISTOR PWR LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G27L-100,118

Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
2.6GHz ~ 2.7GHz
Gain
17.5dB
Voltage - Rated
65V
Current - Test
900mA
Voltage - Test
28V
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
BLF7G27L-100_7G27LS-100
Preliminary data sheet
Fig 7.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
19
18
17
16
15
0
V
Pulsed CW power gain as a function of output
power; typical values
DS
= 28 V; I
7.3 Pulsed CW
Dq
40
= 900 mA.
(1)
(2)
(3)
80
P
All information provided in this document is subject to legal disclaimers.
L
001aan544
(W)
BLF7G27L-100; BLF7G27LS-100
120
Rev. 2 — 5 April 2011
Fig 8.
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
60
40
20
0
0
V
Pulsed CW drain efficiency as a function of
output power; typical values
DS
= 28 V; I
Dq
40
= 900 mA.
Power LDMOS transistor
80
© NXP B.V. 2011. All rights reserved.
P
L
001aan545
(W)
(1)
(2)
(3)
120
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