BF1204,135 NXP Semiconductors, BF1204,135 Datasheet - Page 8

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BF1204,135

Manufacturer Part Number
BF1204,135
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1204,135

Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
10V
Current Rating
30mA
Noise Figure
0.9dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
Fig.15 Input admittance as a function of frequency;
V
Fig.17 Forward transfer admittance and phase as
DS
DS
(mS)
(mS)
Y is
10
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
a function of frequency; typical values.
G2
G2
= 4 V.
= 4 V.
10
10
2
2
ϕ fs
y fs
b is
f (MHz)
f (MHz)
g is
MLD429
MLD431
10
10
3
3
−10
(deg)
−10
−1
ϕ fs
2
8
handbook, halfpage
handbook, halfpage
V
Fig.16 Reverse transfer admittance and phase as
V
Fig.18 Output admittance as a function of
DS
DS
(mS)
(μS)
Y os
10
10
y rs
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
= 4 V.
= 4 V.
10
10
2
2
y rs
b os
g os
ϕ rs
f (MHz)
f (MHz)
Product specification
BF1204
MLD430
MLD432
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2

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