BF1101WR,135 NXP Semiconductors, BF1101WR,135 Datasheet - Page 7

• Manufacturer Part Number: BF1101WR,135
• Description: MOSFET N-CH 7V DUAL SOT343
• Manufacturer: NXP Semiconductors

Specifications of BF1101WR,135

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 7V
• Current Rating: 30mA
• Noise Figure: 1.7dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 16 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
R
Fig.15 Unwanted voltage for 1% cross-modulation
V
(1) R
DS
(dBμV)
G1
V unw
DS
(μA)
I G1
Fig.13 Gate 1 current as a function of gate 2
= 5 V; T
= 120 k (connected to V
120
110
100
= 5 V; V
40
30
20
10
90
80
G1
0
0
0
= 68 k.
as a function of gain reduction;
typical values; see Fig.21.
j
GG
= 25 C.
voltage; typical values.
= 5 V; f = 50 MHz; f
10
(1)
(2) R
(2)
2
G1
20
GG
= 120 k.
(3)
); see Fig.21.
unw
30
= 60 MHz; T
gain reduction (dB)
4
(3) R
V GG = 5 V
V G2-S (V)
40
G1
amb
= 180 k.
4.5 V
4 V
3 V
3.5 V
MGS307
MGS309
= 25 C.
50
6
7
handbook, halfpage
handbook, halfpage
reduction
Fig.16 Drain current as a function of gain reduction;
V
(1) R
V
(1) R
gain
(dB)
DS
DS
(mA)
I D
−10
−20
−30
−40
−50
Fig.14 Typical gain reduction as a function of
= 5 V; V
= 5 V; V
25
20
15
10
G1
G1
5
0
0
BF1101; BF1101R; BF1101WR
0
0
= 68 k.
= 68 k.
typical values; see Fig.21.
GG
GG
the AGC voltage; see Fig.21.
= 5 V; f = 50 MHz; T
= 5 V; f = 50 MHz; T
10
(2) R
(2) R
1
(1)
(2)
(3)
G1
G1
20
= 120 k.
= 120 k.
(3)
2
amb
amb
(2)
30
= 25 C.
= 25 C.
gain reduction (dB)
(1)
(3) R
(3) R
Product specification
3
40
V AGC (V)
G1
G1
= 180 k.
= 180 k.
MGS308
MGS310
50
4