BF1101WR,135 NXP Semiconductors, BF1101WR,135 Datasheet - Page 2
![MOSFET N-CH 7V DUAL SOT343](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BF1101WR,135
Manufacturer Part Number
BF1101WR,135
Description
MOSFET N-CH 7V DUAL SOT343
Manufacturer
NXP Semiconductors
Datasheet
1.BF1101WR135.pdf
(15 pages)
Specifications of BF1101WR,135
Package / Case
CMPAK-4
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Voltage - Rated
7V
Current Rating
30mA
Noise Figure
1.7dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
16 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
FEATURES
Short channel transistor with high
Low noise gain controlled amplifier
Partly internal self-biasing circuit to
APPLICATIONS
VHF and UHF applications with
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1101,
BF1101R and BF1101WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
QUICK REFERENCE DATA
1999 May 14
V
I
P
y
C
C
F
X
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
D
forward transfer admittance to input
capacitance ratio
up to 1 GHz
ensure good cross-modulation
performance during AGC and good
DC stabilization.
3 to 7 V supply voltage, such as
television tuners and professional
communications equipment.
SYMBOL
j
DS
tot
mod
N-channel dual-gate MOS-FETs
ig1-ss
rss
fs
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
PINNING
handbook, 2 columns
BF1101 marking code: NDp.
PIN
1
2
3
4
Fig.1
f = 1 MHz
f = 800 MHz
input level for k = 1% at
40 dB AGC
Top view
4
1
source
drain
gate 2
gate 1
Simplified outline
(SOT143B).
CAUTION
CONDITIONS
DESCRIPTION
2
MSB014
3
2
, halfpage
25
100
MIN.
handbook, 2 columns
BF1101R marking code: NCp.
BF1101WR marking code: NC.
BF1101; BF1101R;
Fig.2
Fig.3
30
2.2
25
1.7
TYP.
3
2
Top view
3
Top view
2
Simplified outline
(SOT143R).
Simplified outline
(SOT343R).
Product specification
BF1101WR
7
30
200
2.7
35
2.5
150
MAX.
MSB842
MSB035
4
1
4
1
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT