BF1100R,235 NXP Semiconductors, BF1100R,235 Datasheet - Page 12

• Manufacturer Part Number: BF1100R,235
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,235

• Package / Case: TO-253-4 Reverse Pinning, SC-61
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=40CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
Table 3 Scattering parameters: V
Table 4 Noise data: V
(MHz)
(MHz)
1000
1000
Dual-gate MOS-FETs
100
200
300
400
500
600
700
800
900
100
200
300
400
500
600
700
800
900
f
f
50
50
(MHz)
(MHz)
MAGNITUDE
MAGNITUDE
800
800
f
f
(ratio)
(ratio)
0.986
0.983
0.974
0.960
0.953
0.933
0.915
0.895
0.880
0.864
0.839
0.986
0.984
0.974
0.960
0.953
0.933
0.915
0.894
0.879
0.863
0.838
s
s
11
11
DS
DS
= 9 V; V
= 12 V; V
ANGLE
ANGLE
(deg)
(deg)
14.7
21.8
28.7
35.4
42.0
47.9
53.5
59.6
65.0
14.6
21.8
28.7
35.3
41.9
47.8
53.5
59.5
65.0
3.6
7.4
3.7
7.4
G2-S
DS
DS
G2-S
F
(dB)
2.00
F
(dB)
2.00
= 9 V; V
MAGNITUDE
= 12 V; V
MAGNITUDE
min
min
= 4 V; I
= 4 V; I
(ratio)
(ratio)
2.528
2.531
2.490
2.446
2.412
2.341
2.283
2.205
2.146
2.087
1.998
2.478
2.480
2.440
2.400
2.371
2.306
2.255
2.183
2.131
2.080
1.999
G2-S
D
Rev. 02 - 13 November 2007
G2-S
D
= 10 mA
s
s
= 10 mA
21
21
= 4 V; I
= 4 V; I
ANGLE
ANGLE
174.4
169.8
159.5
149.8
139.8
130.1
120.4
102.9
174.7
170.3
160.6
151.4
141.9
132.7
123.6
107.2
(deg)
(deg)
115.3
111.6
93.4
84.4
98.2
89.7
D
D
(ratio)
(ratio)
= 10 mA
0.67
0.66
= 10 mA
MAGNITUDE
MAGNITUDE
(ratio)
(ratio)
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.003
0.003
0.003
0.003
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.004
0.003
0.003
0.003
opt
opt
s
s
12
12
(deg)
(deg)
43.9
43.3
ANGLE
ANGLE
106.6
135.4
(deg)
(deg)
115.8
63.7
80.7
81.0
80.3
76.3
76.5
79.0
81.5
90.8
72.2
80.9
82.7
79.9
77.7
77.1
77.1
79.3
83.9
95.1
BF1100; BF1100R
MAGNITUDE
MAGNITUDE
(ratio)
(ratio)
1.000
1.000
0.996
0.994
0.992
0.987
0.984
0.981
0.978
0.974
0.971
1.000
1.000
0.997
0.996
0.994
0.991
0.989
0.986
0.984
0.982
0.980
Product specification
0.89
0.97
s
s
r
r
22
22
n
n
12 of 15
ANGLE
ANGLE
(deg)
(deg)
15.7
19.4
23.0
26.7
30.3
33.9
37.6
12.8
15.8
18.7
21.7
24.6
27.5
30.4
11.9
2.0
4.2
8.1
1.6
3.5
6.6
9.7