BF1100R,235 NXP Semiconductors, BF1100R,235 Datasheet - Page 11

• Manufacturer Part Number: BF1100R,235
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,235

• Package / Case: TO-253-4 Reverse Pinning, SC-61
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=40CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
handbook, full pagewidth
Dual-gate MOS-FETs
For V
For V
GG
GG
= V
= V
DS
DS
= 9 V, R
= 12 V, R
G
G
= 180 k .
= 250 k
R GEN
50
V I
50
R2
Fig.27 Cross-modulation test set-up.
4.7 nF
C2
Rev. 02 - 13 November 2007
V GG
10 k
R1
R G
V AGC
4.7 nF
C1
DUT
V DS
4.7 nF
L1
C3
450 nH
C4
12 pF
MGC420
R L
50
BF1100; BF1100R
Product specification
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