BF1202WR,135 NXP Semiconductors, BF1202WR,135 Datasheet - Page 12
![MOSFET 2N-CH 10V 30MA SOT343R](/photos/16/0/160096/sot343_sml.jpg)
BF1202WR,135
Manufacturer Part Number
BF1202WR,135
Description
MOSFET 2N-CH 10V 30MA SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1202WR115.pdf
(15 pages)
Specifications of BF1202WR,135
Package / Case
CMPAK-4
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30.5dB
Voltage - Rated
*
Current Rating
30mA
Noise Figure
0.9dB
Current - Test
12mA
Voltage - Test
5V
Power - Output
*
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
2010 Sep 16
N-channel dual-gate PoLo MOS-FETs
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
1.35
1.15
E
B
1.3
e
scale
EIAJ
12
1
1.15
e 1
A
2.2
2.0
H E
BF1202; BF1202R; BF1202WR
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R