STP34NM60N STMicroelectronics, STP34NM60N Datasheet - Page 14

• Manufacturer Part Number: STP34NM60N
• Description: MOSFET N-CH 600V 29A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP34NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.092 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 29 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10884-5

Package mechanical data
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Table 9.
Dim.
∅P
∅R
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
TO-247 mechanical data
19.85
15.45
14.20
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
18.50
Typ.
5.45
5.50
mm
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50