STP34NM60N STMicroelectronics, STP34NM60N Datasheet

MOSFET N-CH 600V 29A TO-220

STP34NM60N

Manufacturer Part Number
STP34NM60N
Description
MOSFET N-CH 600V 29A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheets

Specifications of STP34NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
105 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2722pF @ 100V
Power - Max
210W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.092 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
29 A
Power Dissipation
210 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10884-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP34NM60N
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
STP34NM60N
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP34NM60N ��P34NM60N
Manufacturer:
ST
0
Part Number:
STP34NM60ND
Manufacturer:
SANYO
Quantity:
5 000
Part Number:
STP34NM60ND
Manufacturer:
ST
0
Features
Application
Description
These devices are made using the second
generation of MDmesh
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
September 2010
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STF34NM60N
STP34NM60N
STW34NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STW34NM60N
Type
STP34NM60N
STF34NM60N
Order codes
N-channel 600 V, 0.092 Ω , 29 A MDmesh™ II Power MOSFET
Device summary
600 V
600 V
600 V
V
DSS
TM
0.105 Ω
0.105 Ω
0.105 Ω
R
technology. This
max.
DS(on)
34NM60N
Marking
29 A
29 A
29 A
I
D
210 W
210 W
Doc ID 17740 Rev 2
40 W
P
STP34NM60N, STW34NM60N
TOT
Figure 1.
TO-247
TO-220FP
TO-220, TO-247, TO-220FP
Package
TO-220
TO-247
Internal schematic diagram
1
2
3
TO-220FP
STF34NM60N
1
Packaging
2
3
Tube
Preliminary data
TO-220
www.st.com
1
1/12
2
3
12

Related parts for STP34NM60N

STP34NM60N Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STF34NM60N STP34NM60N STW34NM60N September 2010 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STP34NM60N, STW34NM60N TO-220, TO-247, TO-220FP TOT 210 W TO-247 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STF34NM60N, STP34NM60N, STW34NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Doc ID 17740 Rev 2 ...

Page 3

... STF34NM60N, STP34NM60N, STW34NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not repetitive (pulse width limited by T Single pulse avalanche energy ...

Page 4

... Total gate charge g Q Gate-source charge gs Q Gate-drain charge gd R Gate input resistance defined as a constant equivalent capacitance giving the same charging time as C oss eq increases from 0 to 80% V 4/12 STF34NM60N, STP34NM60N, STW34NM60N Parameter Test conditions mA Max rating Max rating @125 ° ± ...

Page 5

... STF34NM60N, STP34NM60N, STW34NM60N Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 6. Unclamped inductive waveform 6/12 STF34NM60N, STP34NM60N, STW34NM60N Figure 3. 3.3 2200 µF µ =20V AM01468v1 Figure 5. 3.3 1000 µF µ AM01470v1 Figure 7. V (BR)DSS 10% ...

Page 7

... STF34NM60N, STP34NM60N, STW34NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Doc ID 17740 Rev 2 Package mechanical data ...

Page 8

... Package mechanical data Table 7. TO-220FP mechanical data Dim Dia Figure 8. TO-220FP drawing A 8/12 STF34NM60N, STP34NM60N, STW34NM60N Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 2.9 15 Dia Doc ID 17740 Rev 2 mm Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1 ...

Page 9

... STF34NM60N, STP34NM60N, STW34NM60N TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 17740 Rev 2 Package mechanical data mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2.70 5 ...

Page 10

... Package mechanical data Dim øP øR S 10/12 STF34NM60N, STP34NM60N, STW34NM60N TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 17740 Rev 2 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15 ...

Page 11

... STF34NM60N, STP34NM60N, STW34NM60N 5 Revision history Table 8. Document revision history Date 05-Aug-2010 02-Sep-2010 Revision 1 Initial release. 2 Updated title on cover page and Doc ID 17740 Rev 2 Revision history Changes Table 4: On/off states. 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 STF34NM60N, STP34NM60N, STW34NM60N Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www ...

Related keywords