STP34NM60N STMicroelectronics, STP34NM60N Datasheet - Page 6

• Manufacturer Part Number: STP34NM60N
• Description: MOSFET N-CH 600V 29A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP34NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.092 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 29 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10884-5

Test circuits
3
6/12
Figure 2.
Figure 4.
Figure 6.
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
Switching times test circuit for
resistive load
Test circuit for inductive load
switching and diode recovery times
Unclamped inductive waveform
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 17740 Rev 2
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 3.
Figure 5.
Figure 7.
V
P
i
V
W
0
0
i
=20V=V
STF34NM60N, STP34NM60N, STW34NM60N
P
w
10%
2200
µF
1kΩ
GMAX
td
Gate charge test circuit
Unclamped inductive load test
circuit
Switching time waveform
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD