STW16N65M5 STMicroelectronics, STW16N65M5 Datasheet - Page 7
![MOSFET N-CH 650V 12A TO-247](/photos/29/4/290476/to-247_sml.jpg)
STW16N65M5
Manufacturer Part Number
STW16N65M5
Description
MOSFET N-CH 650V 12A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STW16N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 100V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
12 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10973-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STF/I/P/U/W16N65M5
Figure 8.
Figure 10. Normalized B
Figure 12. Output capacitance stored energy
(norm)
BV
1.00
0.98
1.02
0.96
0.94
E
1.08
1.06
1.04
(µJ)
(A)
DSS
20
15
10
I
oss
D
0
5
7
2
1
6
5
4
3
0
0
-50
0
Output characteristics
-25
100
5
200
0
V
GS
=10V
25
300
10
VDSS
50
400
75
vs temperature
500 600
15
100
6V
7V
6.5V
7.5V
V
T
DS
J
Doc ID 15210 Rev 2
(°C)
AM03187v1
(V)
AM03178v1
AM03312v1
V
DS
(V)
Figure 9.
Figure 11. Static drain-source on resistance
Figure 13. Capacitance variations
R
10000
1000
DS(on)
0.25
100
0.15
(pF)
(A)
(Ω)
0.3
10
I
0.2
0.1
C
D
15
20
10
0
1
5
0
0.1
0
Transfer characteristics
2
V
5
GS
I
D
1
=6A
=10V
4
10
Electrical characteristics
6
10
7
15
V
DS
100
8
=10V
20
9
V
V
GS
DS
I
D
(V)
AM03179v1
AM03181v1
AM03183v1
(A)
(V)
Ciss
Crss
Coss
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