STW16N65M5 STMicroelectronics, STW16N65M5 Datasheet - Page 15
![MOSFET N-CH 650V 12A TO-247](/photos/29/4/290476/to-247_sml.jpg)
STW16N65M5
Manufacturer Part Number
STW16N65M5
Description
MOSFET N-CH 650V 12A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STW16N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 100V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
12 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10973-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STF/I/P/U/W16N65M5
Dim.
øR
A1
øP
b1
b2
L1
L2
A
D
E
S
b
c
e
L
Doc ID 15210 Rev 2
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
18.50
mm.
Typ.
5.45
5.50
Package mechanical data
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
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