STP8NM50N STMicroelectronics, STP8NM50N Datasheet - Page 7
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STP8NM50N
Manufacturer Part Number
STP8NM50N
Description
MOSFET N-CH 500V 5A TO-220AB
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD8NM50N.pdf
(17 pages)
Specifications of STP8NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
790 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
364pF @ 50V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10965-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP8NM50N
Manufacturer:
OSRAM
Quantity:
4 892
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
Figure 8.
Figure 10. Static drain-source on resistance
Figure 12. Capacitance variations
R
DS(on)
1000
0.74
0.69
0.75
0.73
0.71
0.77
0.76
0.72
(pF)
(A)
(Ω)
0.7
100
10
I
C
D
8
4
2
10
6
0
0
1
0
0
Output characteristics
V
V
GS
1
GS
10
=10V
1
=10V
2
6V
20
10
3
7V
4
30
100
Crss
Ciss
Coss
5V
5
V
V
I
DS
D
DS
(A)
(V)
AM07917v1
AM07919v1
AM07921v1
(V)
Doc ID 17413 Rev 2
Figure 9.
Figure 11. Gate charge vs gate-source voltage
Figure 13. Coss stored energy vs V
V
(V)
(A)
(µJ)
12
10
I
GS
10
D
E
0
6
2
8
6
4
2
8
4
0
0
2
1
0
0
0
Transfer characteristics
V
DS
100
2
5
V
DS
200
V
DD
= 20 V
I
4
D
=400 V
Electrical characteristics
=5 A
10
300
6
400
15
8
500
V
V
GS
DS
Q
V
GS
g
DS
(nC)
(V)
AM07918v1
AM03195v1
AM07922v1
(V)
0
400
300
250
200
100
350
150
50
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