STP8NM50N STMicroelectronics, STP8NM50N Datasheet - Page 5

• Manufacturer Part Number: STP8NM50N
• Description: MOSFET N-CH 500V 5A TO-220AB
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP8NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 364pF @ 50V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10965-5

STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17413 Rev 2
I
I
V
I
V
(see
SD
SD
SD
DD
DD
= 5 A, V
= 5 A, di/dt = 100 A/µs
= 5 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
Figure
Test conditions
GS
22)
j
= 150 °C
= 0
Figure
22)
Electrical characteristics
Min.
-
-
-
-
Typ.
187
224
1.3
1.5
14
13
Max. Unit
1.5
20
5
nC
nC
ns
ns
5/17
A
A
V
A
A