STP8NM50N STMicroelectronics, STP8NM50N Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
STP8NM50N
Manufacturer Part Number
STP8NM50N
Description
MOSFET N-CH 500V 5A TO-220AB
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD8NM50N.pdf
(17 pages)
Specifications of STP8NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
790 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
364pF @ 50V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10965-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP8NM50N
Manufacturer:
OSRAM
Quantity:
4 892
STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17413 Rev 2
I
I
V
I
V
(see
SD
SD
SD
DD
DD
= 5 A, V
= 5 A, di/dt = 100 A/µs
= 5 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
Figure
Test conditions
GS
22)
j
= 150 °C
= 0
Figure
22)
Electrical characteristics
Min.
-
-
-
-
Typ.
187
224
1.3
1.5
14
13
Max. Unit
1.5
20
5
nC
nC
ns
ns
5/17
A
A
V
A
A