STD10NM50N STMicroelectronics, STD10NM50N Datasheet - Page 8

• Manufacturer Part Number: STD10NM50N
• Description: MOSFET N-CH 500V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD10NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10954-2

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Normalized B
V
BV
GS(th)
(norm)
1.00
0.80
0.70
1.10
(norm)
1.07
1.05
1.03
0.99
0.97
0.95
0.90
1.01
0.93
DSS
-50
-50
vs temperature
-25
-25
0
0
25
25
50
I
50
VDSS
D
=1mA
75
75
vs temperature
I
D
100
100
=250µA
150
T
J
(°C)
Doc ID 16929 Rev 2
AM08158v1
AM08160v1
T
J
(°C)
Figure 15. Normalized on resistance vs
STD10NM50N, STF10NM50N, STP10NM50N
R
DS(on)
(norm)
1.5
1.3
1.1
0.9
0.7
0.5
2.1
1.9
1.7
-50
temperature
-25
0
25
50
75
100
T
J
(°C)
AM08159v1