STD10NM50N STMicroelectronics, STD10NM50N Datasheet - Page 7

• Manufacturer Part Number: STD10NM50N
• Description: MOSFET N-CH 500V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD10NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10954-2

STD10NM50N, STF10NM50N, STP10NM50N
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
I
1000
D
V
100
(V)
(pF)
(A)
12
12
10
10
10
GS
C
8
6
0
2
6
4
2
4
8
0
1
0
0
0.1
Output characteristics
V
DS
5
V
5
GS
=10V
1
10
10
V
15
DD
I
D
15
=400V
=7A
10
20
20
25
100
6V
5V
AM08154v1
25
30
V
GS
Q
V
Doc ID 16929 Rev 2
DS
g
(nC)
V
AM08156v1
AM08152v1
(V)
DS
150
0
450
400
350
300
250
200
100
Ciss
Crss
50
Coss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
0.53
0.54
0.52
0.51
E
0.55
0.50
(µJ)
(A)
(Ω)
12
10
I
oss
16
12
10
14
D
8
4
2
6
0
2
8
6
4
0
0
0
0
Transfer characteristics
100
2
V
DS
2
200 300
=20V
4
V
Electrical characteristics
GS
=10V
6
4
400
8
500 600
6
10
V
I
GS
D
(A)
AM08155v1
AM08153v1
AM08157v1
(V)
V
DS
(V)
7/16