IRLR6225PBF International Rectifier, IRLR6225PBF Datasheet - Page 7

MOSFET N-CH 20V 100A DPAK

IRLR6225PBF

Manufacturer Part Number
IRLR6225PBF
Description
MOSFET N-CH 20V 100A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR6225PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 21A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.1V @ 50µA
Gate Charge (qg) @ Vgs
72nC @ 4.5V
Input Capacitance (ciss) @ Vds
3770pF @ 10V
Power - Max
63W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
3200µohm
Rds(on) Test Voltage Vgs
4.5V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
D-PAK
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
100 A
Power Dissipation
63 W
Mounting Style
SMD/SMT
Gate Charge Qg
48 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRLR6225PbF
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