IRLR6225PBF International Rectifier, IRLR6225PBF Datasheet - Page 5

• Manufacturer Part Number: IRLR6225PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR6225PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 21A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.1V @ 50µA
• Gate Charge (qg) @ Vgs: 72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3770pF @ 10V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 3200µohm
• Rds(on) Test Voltage Vgs: 4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 100 A
• Power Dissipation: 63 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
Fig 15a. Switching Time Test Circuit
8
7
6
5
4
3
2
1
0
R G
20V
V DS
V GS, Gate -to -Source Voltage (V)
2
t p
≤ 0.1
≤ 1
I AS
D.U.T
4
0.01 Ω
L
6
T J = 125°C
T J = 25°C
8
15V
DRIVER
10
I D = 17A
+
-
+
-
V DD
12
A
14
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
700
600
500
400
300
200
100
90%
V
10%
V
I
DS
0
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
IRLR6225PbF
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 17A
t
f
125
I D
5.9A
8.6A
150
5