STQ3N45K3-AP STMicroelectronics, STQ3N45K3-AP Datasheet - Page 5

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STQ3N45K3-AP

Manufacturer Part Number
STQ3N45K3-AP
Description
MOSFET N-CH 450V 1.8A TO-92
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STQ3N45K3-AP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
6nC @ 10V
Input Capacitance (ciss) @ Vds
150pF @ 25V
Power - Max
2.5W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10969-3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STQ3N45K3-AP
Manufacturer:
STM有大量
Quantity:
20 000
Company:
Part Number:
STQ3N45K3-AP
Quantity:
10
STN3N45K3, STQ3N45K3-AP, STU3N45K3
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 17206 Rev 2
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
DD
= 1.8 A, V
= 1.8 A, di/dt = 100 A/µs
= 1.8 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
Figure
Test conditions
Test conditions
7)
GS
j
= 150 °C
= 0
Figure
7)
Electrical characteristics
Min.
Min
30
-
-
-
-
Typ. Max. Unit
TBD
TBD
TBD
TBD
TBD
TBD
Typ
-
TBD
Max Unit
1.8
7.2
nC
nC
ns
ns
A
A
V
A
A
5/12
V

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