STQ3N45K3-AP STMicroelectronics, STQ3N45K3-AP Datasheet - Page 3

• Manufacturer Part Number: STQ3N45K3-AP
• Description: MOSFET N-CH 450V 1.8A TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STQ3N45K3-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 150pF @ 25V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10969-3

STN3N45K3, STQ3N45K3-AP, STU3N45K3
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area.
Table 3.
Table 4.
Symbol
Symbol
R
Symbol
R
I
DM
P
thj-case
thj-amb
V
V
T
E
I
I
I
TOT
T
T
AR
GS
DS
stg
AS
D
D
j
l
(1)
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25°C, I
Parameter
Parameter
Parameter
D
C
Doc ID 17206 Rev 2
= I
= 25 °C
GS
AR
= 0)
, V
DD
C
C
= 25 °C
= 100 °C
= 50V)
j
max)
SOT-223
SOT-223
62.50
2
0.38
0.6
2.4
Max value
-55 to 150
TO-92
TO-92
Value
2.5
TBD
± 30
50
300
450
150
0.5
Electrical ratings
IPAK
IPAK
4.63
100
1.8
7.2
27
1
°C/W
°C/W
Unit
Unit
Unit
mJ
°C
°C
°C
W
A
V
V
A
A
A
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