SI1072X-T1-GE3 Vishay, SI1072X-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI1072X-T1-GE3
• Description: MOSFET N-CH 30V SC89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1072X-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 15V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 129mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73892
S10-2542-Rev. E, 08-Nov-10
0.0001
0.001
0.01
0.1
10
1
-4
www.vishay.com/ppg?73892.
Duty Cycle = 0.5
0.02
0.05
0.1
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
A
-2
= 25 °C, unless otherwise noted)
Square Wave Pulse Duration (s)
10
-1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
Z
100
Vishay Siliconix
thJA
thJA
t
t
1
2
(t)
= 540 ° C/W
Si1072X
www.vishay.com
600
5