SI1072X-T1-GE3 Vishay, SI1072X-T1-GE3 Datasheet
SI1072X-T1-GE3
Specifications of SI1072X-T1-GE3
Related parts for SI1072X-T1-GE3
SI1072X-T1-GE3 Summary of contents
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... DS(on) 0.093 0.129 4 SC-89 (6-LEADS Ordering Information: Si1072X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si1072X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73892 S10-2542-Rev. E, 08-Nov- °C, unless otherwise noted 2.0 2.5 1 Si1072X Vishay Siliconix 3.0 2.4 1.8 1 125 °C C 0.6 25 ° °C 0 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temp. 400 C iss 300 200 100 C oss ...
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... Si1072X Vishay Siliconix TYPICAL CHARACTERISTICS ( 150 °C J 0.1 0.01 0.001 0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA 2.4 D 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage Limited by R www.vishay.com °C, unless otherwise noted) A 0.20 0.16 0.12 0. °C J 0.04 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73892. Document Number: 73892 S10-2542-Rev. E, 08-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1072X Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 540 ° ...
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