SI1072X-T1-GE3 Vishay, SI1072X-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI1072X-T1-GE3
• Description: MOSFET N-CH 30V SC89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1072X-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 15V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 129mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si1072X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
0.01
2.6
2.4
2.2
2.0
1.8
1.6
1.4
0.1
10
1
- 50
0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
0.4
50
Limited by R
0.001
0.01
0.6
0.1
10
75
1
0.1
A
= 25 °C, unless otherwise noted)
100
DS(on)
Single Pulse
* V
T
Safe Operating Area, Junction-to-Ambient
T
A
0.8
J
GS
= 25 °C
= 25 °C
*
125
> minimum V
V
DS
150
- Drain-to-Source Voltage (V)
1
1
GS
at which R
BVDSS Limited
10
DS(on)
0.20
0.16
0.12
0.08
0.04
0.00
5.0
4.0
3.0
2.0
1.0
0.0
0.01
0
is specified
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
R
0.1
DS(on)
2
100
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
vs. V
1
4
Time (s)
GS
vs. Temperature
S10-2542-Rev. E, 08-Nov-10
10
Document Number: 73892
6
T
T
A
A
100
I
= 25 °C
8
D
= 125 °C
= 1.3 A
1000
10