CMF20120D Cree Inc, CMF20120D Datasheet - Page 8

• Manufacturer Part Number: CMF20120D
• Description: SIC MOSFET N-CH 1200V TO-247-3
• Manufacturer: Cree Inc
• Series: SiC MOSFETr

Specifications of CMF20120D

• Mfg Application Notes: SiC MOSFETs Application Considerations
• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 90.8nC @ 20V
• Input Capacitance (ciss) @ Vds: 1915pF @ 800V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 1200V
• On Resistance Rds(on): 0.08ohm
• Rds(on) Test Voltage Vgs: 20V
• Configuration: Single
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTES: 1. The recommended on-state V
Reverse Diode Characteristics
Gate Charge Characteristics
Electrical Characteristics
Thermal Characteristics
Symbol
8
Symbol
Symbol
Symbol
V
R
V
t
t
(BR)DSS
I
I
C
C
C
d(off)i
E
E
GS(th)
DS(on)
d(on)i
R
g
R
R
R
Q
Q
DSS
GSS
V
I
t
t
Q
Q
t
oss
rss
ON
Off
iss
fi
rrm
θCS
fs
r
θJC
θJA
G
rr
gd
sd
gs
rr
g
CMF20120D Rev. A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Internal Gate Resistance
Parameter
Thermal Resistance from Junction to Case
Case to Sink, w/ Thermal Compound
Thermal Resistance From Junction to Ambient
Parameter
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Parameter
GS
( 125ºC)
( 125ºC)
is +20V and the recommended off-state V
(25ºC)
(25ºC)
Min.
1200
Typ.
220
142
3.5
3.1
2.3
Typ.
23.8
43.1
90.8
Typ.
0.58
0.25
Typ.
1915
17.2
13.6
35.6
120
530
422
320
329
2.5
1.8
7.3
6.8
10
80
95
13
62
Max.
1
5
Max.
Max.
0.7
40
Max. Unit
Unit
100
250
250
110
130
nC
ns
4
V
A
Unit
°C/W
Unit
mΩ
V
V
V
V
di
μA
nA
pF
ns
μJ
μJ
nC
Ω
V
V
S
GS
GS
GS
R
GS
F
/dt= 100A/μs
= 800V,
= -5V, I
= -2V, I
= -5V, I
is between -2V and -5V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1MHz
V
V
V
I
R
L = 856μH
Per JEDEC24 Page 27
V
D
V
I
V
GS
DS
DS
DS
DS
GS
GS
GS
DS
DS
GS
DS
AC
DD
GS
G
GS
D
= 6.8Ω
DD
GS
= 20A
= 20V, I
= 20V, I
Test Conditions
= 25mV
= 0V, I
= V
= V
= 1200V, V
= 1200V, V
= 800V
= 20V, V
= 20V, I
= 20V, I
= 0V
= 800V
= -2/20V
= 0V, f = 1MHz , V
=20A
= 800V
= -2/20V Per JEDEC24-2
F
F
F
= 10A, T
= 10A, T
= 20A, T
GS
GS
Test Conditions
Test Conditions
Test Conditions
, I
, I
D
DS
DS
= 100μA
D
D
D
D
DS
= 1mA, T
= 1mA, T
= 20A, T
= 20A, T
= 20A, T
= 20A, T
J
J
J
= 0V
GS
GS
= 25ºC
= 25ºC
= 25ºC
= 0V, T
= 0V, T
J
J
AC
J
J
J
J
= 25ºC
= 125ºC
= 25ºC
= 125ºC
= 25ºC
= 125ºC
= 25mV
J
J
= 25ºC
= 125ºC
fig. 13,14
Note
fig. 3
fig. 5
fig. 12
fig. 6
Note
fig.9
Note
Note
1