CMF20120D Cree Inc, CMF20120D Datasheet

CMF20120D

Manufacturer Part Number

CMF20120D

Description

SIC MOSFET N-CH 1200V TO-247-3

Manufacturer

Cree Inc

Series

SiC MOSFETr

Datasheets

1.CMF20120D.pdf (13 pages)

2.CMF20120D.pdf (2 pages)

Specifications of CMF20120D

Mfg Application Notes

SiC MOSFETs Application Considerations

Fet Type

SiCFET N-Channel, Silicon Carbide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

110 mOhm @ 20A, 20V

Drain To Source Voltage (vdss)

1200V (1.2kV)

Current - Continuous Drain (id) @ 25° C

33A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

90.8nC @ 20V

Input Capacitance (ciss) @ Vds

1915pF @ 800V

Power - Max

150W

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Polarity

N Channel

Continuous Drain Current Id

33A

Drain Source Voltage Vds

1200V

On Resistance Rds(on)

0.08ohm

Rds(on) Test Voltage Vgs

20V

Configuration

Single

Resistance Drain-source Rds (on)

80 mOhms

Forward Transconductance Gfs (max / Min)

7.3 S, 6.8 S

Drain-source Breakdown Voltage

1200 V

Gate-source Breakdown Voltage

25 V

Continuous Drain Current

33 A

Power Dissipation

150 W

Mounting Style

Through Hole

Gate Charge Qg

90.8 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 2
Download datasheet (891Kb)

• Lowest switching loss in its class.

• Enables significantly higher switching frequencies with

• Reduced magnetics and filter size with significantly

world-class efficiency.

reduced cooling requirements.

1200 V 80 mΩ

• High-speed switching

• Low capacitances

• Only 20% increase in

• Easy to parallel

1.2

1.0

0.8

0.6

0.4

0.2

temperature range

DS(ON)

@ 25 ˚C

over operating

TFS IGBT

NPT IGBT

TFS IGBT

Si MOS 8

SiC MOS

Z-FET

Industry’s First SiC MOSFET

SiC Forward Characteristics vs Current Si Technology*

SiC MOS

SiC Switching Characteristics vs Current Si Devices*

(V), V

NPT IGBT

(˚C)

100

(V)

Lowest V

Si SJMOS

125

™

CMF20120D

of any device at 20 A

150

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Si MOS 8

Normalized R

* Positive temperature coefficient for easy paralleling

175

2.5

2.0

1.5

1.0

0.5

DS(on)

Total

(°C)

Drift + JFET

vs. Temperature

100

@ 150 ˚C

* Determined by Cree to be the most appropriate Si devices

of comparable amperage rating.

NPT IGBT

Channel

TFS IGBT

Si MOS 8

SiC MOS

125

TFS IGBT

150

175

(V), V

(˚C)

100

NPT IGBT

(V)

SiC MOS

bulk

channel

drift+jfet

channel

• Reduces R

decreases with temp

on R

increases with temp

decreases with temp

125

increases as expected

DS(on)

Si SJMOS

Si MOS 8

drift+jfet

150

TC effect

175

Related parts for CMF20120D

CMF20120D Summary of contents

Page 1

... J • Lowest switching loss in its class. • Enables significantly higher switching frequencies with world-class efficiency. • Reduced magnetics and filter size with significantly reduced cooling requirements. CMF20120D ™ Normalized R vs. Temperature DS(on) 1.4 * Positive temperature coefficient for easy paralleling 1.2 Total 1 ...

Page 2

Silicon Carbide MOSFET Application Example Three Phase 400 V • 16.6 kHz SW • DC Link Voltage = 650 V • Neutral Point Clamped B6 Topology (Fraunhofer ISE, Germany) IGBT from Fairchild SiC MOSFET from ...

Related keywords

CMF20120D datasheet
CMF20120D data sheet
CMF20120D pdf datasheet
CMF20120D component
CMF20120D part
CMF20120D distributor
CMF20120D RoHS
CMF20120D datasheet download