CMF20120D Cree Inc, CMF20120D Datasheet - Page 2

• Manufacturer Part Number: CMF20120D
• Description: SIC MOSFET N-CH 1200V TO-247-3
• Manufacturer: Cree Inc
• Series: SiC MOSFETr

Specifications of CMF20120D

• Mfg Application Notes: SiC MOSFETs Application Considerations
• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 90.8nC @ 20V
• Input Capacitance (ciss) @ Vds: 1915pF @ 800V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 1200V
• On Resistance Rds(on): 0.08ohm
• Rds(on) Test Voltage Vgs: 20V
• Configuration: Single
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
Maximum Ratings
CMF20120D-
Z-F
N-Channel Enhancement Mode
Features
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•
•
•
•
•
Benefits
•
•
•
•
Applications
•
•
•
Symbol
T
I
J
Dpulse
V
E
E
P
I
M
Industry Leading R
High Speed Switching
Low Capacitances
Easy to Parallel
Simple to Drive
Pb-Free Plating, RoHS Compliant, Halogen Free
Higher System Efficiency
Reduced Cooling Requirements
Avalanche Ruggedness
Increased System Switching Frequency
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
, T
T
I
AR
AS
AR
GS
tot
D
L
d
stg
CMF20120D Rev. A
e T
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Current
Gate Source Voltage
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Mounting Torque
TM
M
DS(on)
OSFET
Parameter
Silicon Carbide Power MOSFET
-5/+25
Value
-55 to
+125
150
260
2.2
1.5
8.8
33
17
78
20
1
Package
Part Number
CMF20120D
TO-247-3
lbf-in
Unit
Nm
˚C
˚C
W
A
A
A
V
J
J
V
V
Pulse width t
T
I
L = 9.5 mH
t
I
t
T
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
D
AR
D
AR
C
C
GS
GS
=25˚C
= 25˚C
= 20A, V
= 20A, V
@20V, T
@20V, T
limited by T
limited by T
Test Conditions
Package
TO-247-3
DD
DD
C
C
P
= 25˚C
= 100˚C
limited by T
= 50 V,
= 50 V, L = 3 mH
V
R
I
jmax
jmax
D(MAX)
DS
DS(on)
G
G
@
T
C
=25°C
jmax
= 1200 V
= 80 mΩ
= 33 A
S
D
D
S
Note