IRFHS9351TRPBF International Rectifier, IRFHS9351TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRFHS9351TRPBF
• Description: MOSFET 2P-CH 30V 2.3A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9351TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.4 W
• Gate Charge Qg: 1.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 17a. Unclamped Inductive Test Circuit
6
Fig 16a. Gate Charge Test Circuit
0
R
-V
-20V
G
V DS
GS
Fig 18a. Switching Time Test Circuit
t p
≤ 0.1 %
≤ 1
I AS
20K
1K
D.U.T
0.01 Ω
L
S
S
DRIVER
DUT
L
15V
+
V DD
-
A
VCC
Id
Fig 16b. Gate Charge Waveform
V
10%
90%
V
Fig 17b. Unclamped Inductive Waveforms
GS
DS
Vgs
Fig 18b. Switching Time Waveforms
I
AS
t
d(on)
Qgodr
t
r
t p
Qgd
V
t
Qgs2
(BR)DSS
d(off)
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Vgs(th)
Vds
Qgs1
t
f