IRFHS9351TRPBF International Rectifier, IRFHS9351TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFHS9351TRPBF
• Description: MOSFET 2P-CH 30V 2.3A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9351TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.4 W
• Gate Charge Qg: 1.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
1000
100
100
100
0.1
0.1
10
10
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
1
1
T J = 150°C
-2.8V
2
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
T J = 25°C
1
C oss
C rss
C iss
≤60μs
Tj = 25°C
4
V DS = -15V
≤60μs PULSE WIDTH
f = 1 KHZ
10
PULSE WIDTH
5
10
TOP
BOTTOM
6
7
VGS
-10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
100
100
8
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
14
12
10
10
Fig 2. Typical Output Characteristics
8
6
4
2
0
1
0.1
-60 -40 -20 0
0
I D = -3.1A
TOP
BOTTOM
I D = -3.1A
V GS = -10V
-V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
1
Q G , Total Gate Charge (nC)
VGS
-10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
1
-2.8V
20 40 60 80 100 120 140 160
≤60μs
Tj = 150°C
2
V DS = -24V
V DS = -15V
PULSE WIDTH
3
10
4
100
5
3