IRFHS9351TRPBF International Rectifier, IRFHS9351TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFHS9351TRPBF
• Description: MOSFET 2P-CH 30V 2.3A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9351TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.4 W
• Gate Charge Qg: 1.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
…
†
.
BV
R
V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
R
R
R
R
Static @ T
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off )
f
S
SM
rr
V
DS(on)
GS(th)
g
g
gs
gd
G
iss
oss
rss
SD
rr
JC
JC
JA
JA
Repetitive rating; pulse width limited by max. junction temperature.
R
Current limited by package. .
For DESIGN AID ONLY, not subject to production testing.
GS(th)
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
2
DSS
V
θ
DSS
(Bottom)
(Top)
is measured at T
/ T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate R esistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer C apacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (t<10s)
J
Parameter
of approximately 90°C.
Ù
Parameter
Parameter
g
g
f
f
Min.
Min.
-1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
2.4
Typ.
Typ.
0.02
-1.8
-4.6
–––
135
235
–––
–––
–––
–––
–––
160
–––
–––
–––
1.9
3.7
0.6
1.1
8.3
6.3
7.9
17
30
39
26
20
42
Max.
Max.
Typ.
–––
–––
–––
-150
-100
–––
–––
–––
100
–––
170
290
-2.4
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-5.1
-1.2
-20
30
63
Units
mV/°C
Units
V/°C
m
μA
nA
nC
nC
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 19a & 19b
V
V
ƒ = 1.0KHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 370/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
G
GS
DS
= -3.1A
= -3.1A
= 25°C, I
= 25°C, I
= 1.8
= 0V, I
= -10V, I
= -4.5V, I
= V
= -24V, V
= -24V, V
= -20V
= 20V
= -10V, I
= -15V,V
= -10V
= -15V
= -15V, V
= 0V
= -25V
GS
Max.
170
, I
19
90
75
D
Conditions
Conditions
D
S
F
= -250μA
D
D
GS
= -10μA
D
GS
GS
= -3.1A, V
= -3.1A, V
GS
e
= -3.1A
= -3.1A
= -2.5A
= -4.5V,I
= 0V
= 0V, T
= -4.5V
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D
= -1mA
e
e
G S
DD
J
G
D
e
= 125°C
= - 3.1A
= -15V
Units
= 0V
°C/W
e
D
S