NTLUS3A90PZTBG ON Semiconductor, NTLUS3A90PZTBG Datasheet - Page 5

• Manufacturer Part Number: NTLUS3A90PZTBG
• Description: POWER MOSFET 20V 3A 60 MO UDFN6
• Manufacturer: ON Semiconductor

Specifications of NTLUS3A90PZTBG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 950pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
DEVICE ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTLUS3A90PZTAG
NTLUS3A90PZTBG
90
80
70
60
50
40
30
20
10
0
1E−06
0.2
0.1
Duty Cycle = 0.5
Device
0.05
1E−05
0.02
1E−04
0.01
0.01
100
0.1
10
1
0.1
Figure 13. Maximum Rated Forward Biased
V
Single Pulse
T
C
GS
= 25°C
−V
1E−03
= −8 V
Figure 14. FET Thermal Response
TYPICAL CHARACTERISTICS
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Single Pulse
Safe Operating Area
http://onsemi.com
R
Thermal Limit
Package Limit
1
DS(on)
(Pb−Free)
(Pb−Free)
Package
UDFN6
UDFN6
1E−02
t, TIME (s)
Limit
5
1E−01
10
10 ms
100 ms
10 ms
1 ms
dc
1E+00
100
R
qJA
3000 / Tape & Reel
3000 / Tape & Reel
= 84°C/W
1E+01
Shipping
†
1E+02
1E+03