NTLUS3A90PZTBG ON Semiconductor, NTLUS3A90PZTBG Datasheet - Page 4

• Manufacturer Part Number: NTLUS3A90PZTBG
• Description: POWER MOSFET 20V 3A 60 MO UDFN6
• Manufacturer: ON Semiconductor

Specifications of NTLUS3A90PZTBG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 950pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2000
1600
1200
1000
0.85
0.75
0.65
0.55
0.45
0.35
0.25
0.15
800
400
100
10
0
1
−50
0
1
C
V
V
I
Figure 9. Resistive Switching Time Variation
D
rss
GS
DD
= −3.0 A
−25
2
= −4.5 V
= −15 V
−V
C
C
iss
oss
DS
Figure 7. Capacitance Variation
T
4
Figure 11. Threshold Voltage
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
R
G
6
vs. Gate Resistance
, GATE RESISTANCE (W)
25
8
10
10
50
t
t
d(on)
d(off)
t
t
f
r
12
75
14
TYPICAL CHARACTERISTICS
I
100
D
= −250 mA
V
T
f = 1 MHz
16
GS
J
= 25°C
125
= 0 V
http://onsemi.com
18
100
150
20
4
5
4
3
2
1
0
100
225
200
175
150
125
100
0
1.E−05
10
75
50
25
Q
1
0
GS
0.2
Drain−to−Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
2
Figure 12. Single Pulse Maximum Power
V
DS
−V
Q
Figure 8. Gate−to−Source and
Q
G
SD
0.4
GD
1.E−03
, TOTAL GATE CHARGE (nC)
4
, SOURCE−TO−DRAIN VOLTAGE (V)
T
J
SINGLE PULSE TIME (s)
= 125°C
Q
6
0.6
T
Dissipation
1.E−01
8
T
J
= −55°C
0.8
T
J
10
= 25°C
V
V
I
T
1.E+01
D
GS
DS
J
= −3.0 A
= 25°C
= −10 V
12
1.0
1.E+03
14
12
10
8
6
4
2
0
1.2