NTLUS3A90PZTBG ON Semiconductor, NTLUS3A90PZTBG Datasheet - Page 3

• Manufacturer Part Number: NTLUS3A90PZTBG
• Description: POWER MOSFET 20V 3A 60 MO UDFN6
• Manufacturer: ON Semiconductor

Specifications of NTLUS3A90PZTBG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 950pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
18
16
14
12
10
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
8
6
4
2
0
0
−50
1.0
Figure 3. On−Resistance vs. Gate−to−Source
V
I
D
0.5
Figure 5. On−Resistance Variation with
GS
−25
= −4.0 A
Figure 1. On−Region Characteristics
−V
1.5
= −4.5 V
DS
T
1.0
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
−V
0
2.0
GS
−3.5 V
1.5
, GATE VOLTAGE (V)
Temperature
25
−3.0 V
−2.5 V
2.5
Voltage
2.0
−4.0 V
V
GS
50
2.5
= −4.5 V
3.0
75
3.0
3.5
TYPICAL CHARACTERISTICS
100
3.5
I
T
D
J
= −4.0 A
= 25°C
4.0
−1.8 V
−1.5 V
http://onsemi.com
−2.0 V
4.0
125
4.5
4.5
150
3
10,000
0.180
0.140
0.100
0.060
0.020
1000
100
16
14
12
10
8
6
4
2
0
2
0
0
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
DS
2
4
−1.5 V
≤ −10 V
−V
−V
0.5
Figure 2. Transfer Characteristics
DS
T
GS
4
J
6
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
= 125°C
T
−I
J
6
D
= 25°C
1.0
−1.8 V
, DRAIN CURRENT (A)
8
Gate Voltage
vs. Voltage
8
T
T
10
J
J
= 125°C
= 85°C
1.5
10
T
J
12
= −55°C
12
2.0
14
14
V
16
GS
16
T
2.5
J
= −4.5 V
= 25°C
−2.5 V
18
18
3.0
20
20