STGIPS20K60 STMicroelectronics, STGIPS20K60 Datasheet - Page 11

IGBT IPM MODULE 17A 600V 25SDIP

STGIPS20K60

Manufacturer Part Number
STGIPS20K60
Description
IGBT IPM MODULE 17A 600V 25SDIP
Manufacturer
STMicroelectronics
Type
IGBTr
Datasheet

Specifications of STGIPS20K60

Configuration
3 Phase
Current
17A
Voltage
600V
Voltage - Isolation
2500VDC
Package / Case
25-SDIP Module
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
17 A
Power Dissipation
42 W
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10573-5

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STGIPS20K60
1. Simulated curves refer to typical IGBT parameters and maximum R
Figure 5.
26
26
24
24
22
22
20
20
18
18
16
16
14
14
12
12
10
10
4
4
Maximum I
switching frequency
V
V
P
P
PN
PN
F
F
= 300 V, Modulation index = 0.8,
= 300 V, Modulation index = 0.8,
= 0.6, T
= 0.6, T
8
8
j
j
= 150 °C, f
= 150 °C, f
T
T
C
C
C(RMS)
= 100 °C
= 100 °C
T
T
C
C
SINE
SINE
12
12
= 80 °C
= 80 °C
= 60 Hz
= 60 Hz
current vs.
(1)
16
16
f
f
SW
SW
Doc ID 16098 Rev 3
AM07841v1
[kHz]
[kHz]
20
20
Figure 6.
thj-c.
16
16
15
15
14
14
13
13
12
12
11
11
10
10
9
9
8
8
1
1
V
V
P
P
PN
PN
F
F
= 0.6, Tj = 150 °C, T
= 0.6, Tj = 150 °C, T
= 300 V, Modulation index = 0.8,
= 300 V, Modulation index = 0.8,
Maximum I
(1)
f
f
f
f
f
f
SW
SW
SW
SW
SW
SW
= 16 kHz
= 16 kHz
= 20 kHz
= 20 kHz
= 12 kHz
= 12 kHz
C
C
= 100 °C
= 100 °C
C(RMS)
Electrical characteristics
10
10
current vs. f
f
f
SINE
SINE
AM07842v1
SINE
[Hz]
[Hz]
11/19
100
100

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