APTM20TDUM16PG Microsemi Power Products Group, APTM20TDUM16PG Datasheet - Page 6

• Manufacturer Part Number: APTM20TDUM16PG
• Description: MOSFET MOD TRIPLE DUAL SRC SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20TDUM16PG

• Fet Type: 6 N-Channel (3-Phase Leg)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 104A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 7220pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
120
100
300
250
200
150
100
1.5
0.5
80
60
40
20
50
0
2
1
0
0
25
0
0
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
V
D=50%
R
T
T
DS
J
DS
J
G
G
J
C
DS
=125°C
=125°C
G
=125°C
=5Ω
=5Ω
=75°C
=5Ω
=133V
=133V
25
Switching Energy vs Current
25
=133V
38
Delay Times vs Current
I
D
I
I
D
50
50
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
50
switching
75
75
Hard
E
63
off
100 125 150 175
100 125 150 175
ZCS
75
E
t
d(off)
ZVS
off
t
d(on)
88
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E
on
100
APTM20TDUM16PG
1000
160
140
120
100
2.5
1.5
0.5
100
80
60
40
20
10
0
3
2
1
1
Switching Energy vs Gate Resistance
0.2 0.4 0.6 0.8
0
0
Source to Drain Diode Forward Voltage
V
R
T
L=100µH
V
I
T
L=100µH
D
DS
J
G
DS
J
=104A
=125°C
5 10 15 20 25 30 35 40 45 50
V
=125°C
=5Ω
Rise and Fall times vs Current
=133V
25
=133V
SD
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
T
50
I
D
J
, Drain Current (A)
=150°C
75
T
J
=25°C
1
100 125 150 175
1.2 1.4 1.6 1.8
t
t
r
f
E
E
on
off
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