APTM50SKM19G Microsemi Power Products Group, APTM50SKM19G Datasheet - Page 6

• Manufacturer Part Number: APTM50SKM19G
• Description: MOSFET N-CH 500V 163A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50SKM19G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 163A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 492nC @ 10V
• Input Capacitance (ciss) @ Vds: 22400pF @ 25V
• Power - Max: 1136W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
400
350
300
250
200
150
100
80
60
40
20
10
50
0
0
8
6
4
2
0
20
20
Operating Frequency vs Drain Current
0
V
R
T
L=100µH
V
R
T
L=100µH
V
D=50%
R
T
T
DS
G
J
=125°C
DS
J
Switching Energy vs Current
G
DS
J
C
G
=1Ω
=125°C
=125°C
=1Ω
=75°C
=333V
=1Ω
20
=333V
=333V
60
60
Delay Times vs Current
I
I
D
D
I
, Drain Current (A)
D
, Drain Current (A)
40
, Drain Current (A)
100
100
switching
60
Hard
140
140
ZCS
80 100 120 140
180
180
ZVS
td(off)
td(on)
220
220
E
on
E
off
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260
260
1000
120
100
100
80
60
40
20
10
16
14
12
10
0
8
6
4
2
0
1
20
Source to Drain Diode Forward Voltage
0.2 0.4 0.6 0.8
0
Switching Energy vs Gate Resistance
APTM50SKM19G
V
R
T
L=100µH
V
I
T
L=100µH
D
J
DS
G
J
DS
=125°C
=163A
V
=125°C
=1Ω
=333V
=333V
SD
60
Rise and Fall times vs Current
T
, Source to Drain Voltage (V)
2.5
J
Gate Resistance (Ohms)
=150°C
I
D
100
, Drain Current (A)
E
T
off
5
J
=25°C
140
1
7.5
1.2 1.4 1.6 1.8
180
t
f
t
r
E
10
220
E
off
on
12.5
260
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