APTM100H35FTG Microsemi Power Products Group, APTM100H35FTG Datasheet
APTM100H35FTG
Specifications of APTM100H35FTG
Related parts for APTM100H35FTG
APTM100H35FTG Summary of contents
Page 1
... Low junction to case thermal resistance • Solderable terminals both for power and signal for NTC2 easy PCB mounting NTC1 • Low profile • RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTM100H35FTG ® FREDFETs DSon Max ratings Unit 1000 ±30 V 420 mΩ 390 ...
Page 2
... SD dv/dt Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 22A di/dt ≤ 700A/µ APTM100H35FTG = 25°C unless otherwise specified j Test Conditions V = 0V,V = 1000V 0V,V = 800V T GS ...
Page 3
... R : Thermistor value − 25 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTM100H35FTG Min Typ Max Unit 0.32 °C/W 2500 V -40 150 °C -40 125 -40 100 M5 2.5 4.7 N.m 160 g Min Typ ...
Page 4
... Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 11A 1.3 GS 1.2 V =10V GS 1 0.9 0 Drain Current (A) D APTM100H35FTG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature 25 20 ...
Page 5
... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APTM100H35FTG ON resistance vs Temperature 2.5 V =10V GS I =11A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...
Page 6
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100H35FTG 80 V ...